Samsung Electronics, a global leader in advanced memory technology launched its latest 800GB Solid State Drive (SSD) called SZ985 Z-SSD. It is specifically offers high level storage for today’s artificial intelligence (AI), big data and Internet of Things (IoT).
The four-lane 800GB Z-SSD was first developed in 2017. It has a new single port and Z-NAND chips that offers 10X higher cell read performance than 3-bit V-NAND chips.
It also comes with 1.5GB LPDDR4 DRAM for higher performance control. This new SZ985 Z-SSD delivers 750K IOPS random read speed, random write speed of up to 170K IOPS and 16ms write latency.
Statistically speaking, it has 1.7 times faster read speeds and 5 times lesser write latency when compared to an NVMe SSD PM963 (based on 3-bit V-NAND chips).
Samsung is also planning to introduce 240GB version as well. Both 800GB Z-SSD and 240GB models will be showcased at ISSCC 2018 which is held from February 11th to 15th in San Francisco.
Jinman Han, senior vice president, Memory Product Planning & Application Engineering at Samsung Electronics. said –
With our leading-edge 800GB Z-SSD, we expect to contribute significantly to market introductions of next-generation super-computing systems in the near future, enabling improved IT investment efficiency and exceptional performance.
We will continue to develop next-generation Z-SSDs with higher density and greater product competitiveness, in order to lead the industry in accelerating growth of the premium SSD* market.