Samsung Electronics, a global leader in advanced memory technology launched its latest 800GB Solid State Drive (SSD) called SZ985 Z-SSD. It is specifically offers high level storage for today’s artificial intelligence (AI), big data and Internet of Things (IoT).
The four-lane 800GB Z-SSD was first developed in 2017. It has a new single port and Z-NAND chips that offers 10X higher cell read performance than 3-bit V-NAND chips.
It also comes with 1.5GB LPDDR4 DRAM for higher performance control. This new SZ985 Z-SSD delivers 750K IOPS random read speed, random write speed of up to 170K IOPS and 16ms write latency.
Statistically speaking, it has 1.7 times faster read speeds and 5 times lesser write latency when compared to an NVMe SSD PM963 (based on 3-bit V-NAND chips).This storage device guarantees up to 30 drive writes per day (DWPD) for five years, which totals to 42 petabytes. In simple words, it can store about 8.4 million 5GB-equivalent 1080p movies during a 5 year period. Moreover it has mean time between failures (MTBF) of 2 million hours.
Samsung is also planning to introduce 240GB version as well. Both 800GB Z-SSD and 240GB models will be showcased at ISSCC 2018 which is held from February 11th to 15th in San Francisco.
Jinman Han, senior vice president, Memory Product Planning & Application Engineering at Samsung Electronics. said –
With our leading-edge 800GB Z-SSD, we expect to contribute significantly to market introductions of next-generation super-computing systems in the near future, enabling improved IT investment efficiency and exceptional performance.
We will continue to develop next-generation Z-SSDs with higher density and greater product competitiveness, in order to lead the industry in accelerating growth of the premium SSD* market.